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U.S. Patents Awarded to Inventors in Oregon (July 31)(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., July 31 -- The following federal patents were awarded to inventors in Oregon. *** ImTech Assigned Patent ALEXANDRIA, Va., July 31 -- ImTech, Corvallis, Ore., has been assigned a patent (7,763,668) developed by Kenneth E. Trueba, Corvallis, Ore., and William Allen Buskirk, Albany, Ore., for a "curable thermally ejectable printing fluid." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A curable printing fluid composition for a thermal fluid ejection device is disclosed, wherein the printing fluid composition comprises a curable liquid-phase monomer, a volatile driver fluid capable of being vaporized by a thermal fluid ejection printhead, and a resistor protectant." The patent application was filed on March 22, 2006 (11/387,511). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=77,63,668.PN.&OS=PN/77,63,668&RS=PN/77,63,668 Written by Rajat Puri; edited by Jaya Anand. *** Intel Assigned Patent ALEXANDRIA, Va., July 31 -- Intel, Santa Clara, Calif., has been assigned a patent (7,763,395) developed by four co-inventors for a "radiation stability of polymer pellicles." The co-inventors are Alexander Tregub, Oak Park, Calif., Florence Eschbach, Portola Valley, Calif., James Powers, Aloha, Ore., and Fu-Chang Lo, Palo Alto, Calif. The abstract of the patent published by the U.S. Patent and Trademark Office states: "An embodiment of the present invention includes a technique to improve stability of a pellicle. The pellicle is pre-baked at a predetermined temperature substantially below a glass transition temperature. The pre-baked pellicle is purged with an inert gas. The purged pellicle is radiated by a radiation at a wavelength. In another embodiment, a chamber is sealed with a pellicle membrane which divides the chamber into first and second compartments. The chamber has an inflow opening in the first compartment and an outflow opening in the second compartment. A gas is injected into the inflow opening and penetrates the pellicle membrane to the outflow opening. In another embodiment, the chamber has first inflow and outflow openings and second inflow and outflow openings in the first and second compartments, respectively. A first gas is injected into the first inflow opening and a second gas into the second inflow opening. The first and second gases have a permeability difference. The first gas penetrates the pellicle membrane to the second outflow opening." The patent application was filed on June 30, 2003 (10/611,070). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=7763395.PN.&OS=PN/7763395&RS=PN/7763395 Written by Ankresh Ranjan; edited by Jaya Anand. *** Intel Assigned Patent for High K Dielectric Growth on Metal Triflate or Trifluoroacetate Terminated III-V Semiconductor Surfaces ALEXANDRIA, Va., July 31 -- Intel, Santa Clara, Calif., has been assigned a patent (7,763,317) developed by four co-inventors for a "high K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces." The co-inventors are James M. Blackwell, Portland, Ore., Willy Rachmady, Beaverton, Ore., Gregory J. Kearns, Eugene, Ore., and Darryl J. Morrison, Calgary, Canada. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H.sub.2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al.sub.2O.sub.3), on the compound semiconductor surface." The patent application was filed on March 30, 2007 (11/694,781). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,763,317&OS=7,763,317&RS=7,763,317 Written by Satyaban Rath; edited by Hemanta Panigrahi. For more information about Targeted News Service products and services, please contact: Myron Struck, editor, Targeted News Service LLC, Springfield, Va., 703/304-1897; [email protected]; http://targetednews.com. -1056079 (c) 2011 Targeted News Service |