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U.S. Patents Awarded to Inventors in Idaho (July 17)
[July 17, 2011]

U.S. Patents Awarded to Inventors in Idaho (July 17)


(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., July 17 -- The following federal patents were awarded to inventors in Idaho.

*** Micron Technology Assigned Patent for Photoresist Processing Methods ALEXANDRIA, Va., July 17 -- Micron Technology, Boise, Idaho, has been assigned a patent (7,977,037) developed by four co-inventors for photoresist processing methods. The co-inventors are Kevin J. Torek, Meridian, Idaho, Todd R. Abbott, Boise, Idaho, Sandra L. Tagg, Boise, Idaho, and Amy Weatherly, Boise, Idaho.



The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating." The patent application was filed on Aug. 24, 2006 (11/510,010). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,977,037&OS=7,977,037&RS=7,977,037 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Micron Technology Assigned Patent for Method to Recover the Exposure Sensitivity of Chemically Amplified Resins from Post Coat Delay Effect ALEXANDRIA, Va., July 17 -- Micron Technology, Boise, Idaho, has been assigned a patent (7,977,017) developed by Baorui Yang, Boise, Idaho, for a "method to recover the exposure sensitivity of chemically amplified resins from post coat delay effect." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect." The patent application was filed on Nov. 2, 2010 (12/917,571). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,977,017&OS=7,977,017&RS=7,977,017 Written by Satyaban Rath; edited by Hemanta Panigrahi.


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