TriQuint Secures Navy Contract for GaAs Amplifiers
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[October 10, 2008]

TriQuint Secures Navy Contract for GaAs Amplifiers

(Wireless News Via Acquire Media NewsEdge)
TriQuint Semiconductor, a RF products manufacturer and foundry services
provider, announced that the Office of Naval Research (ONR) has awarded
TriQuint a 21-month, $4.5 million contract to advance manufacturing
methods used to produce high-power, high-frequency gallium arsenide
(GaAs) amplifiers.

TriQuint was chosen based on its experience developing
high-performance, high-reliability amplifiers for a wide range of
defense and aerospace applications, according to Dr. David Fanning,
TriQuint Contract Program Manager.

"Winning this contract demonstrates the government's confidence in
TriQuint's ability to develop the critical technologies needed for
Department of Defense applications. High voltage gallium arsenide is a
tested and proven technology that exhibits high reliability using
existing processes and materials, ideally suited for military and
commercial production programs," said Dr. Fanning.

He added that TriQuint's high voltage pHEMT (pseudomorphic high
electron mobility transistor) GaAs technology will be the focus of the
new ONR program since it provides higher power density (more power per
square millimeter of surface area) and efficiency compared to other
processes. These performance characteristics are required for critical
Navy applications including phased array radar, electronic warfare and
communications systems. TriQuint has been developing high voltage
gallium arsenide pHEMT technology since 2000; advanced X-band and
S-band versions of that process were developed under previous ONR
contracts.

Fanning explained that the new program's objectives are to extend the


use of the high voltage gallium arsenide pHEMT technology to higher
frequencies. In the first phase of the program TriQuint will develop a
new high-frequency, high-power device technology and will extract
circuit design models. In the second phase, TriQuint will design and
fabricate high power monolithic microwave integrated circuits (MMICs).
TriQuint is the sole contractor and is performing the work at its
Richardson, Texas facility.

Dr. Gailon Brehm, TriQuint's Defense and Aerospace Product Marketing
Director, said, "TriQuint currently supplies high volume,
cost-effective foundry services and standard products based on both
low- and high-voltage gallium arsenide. This enhanced high frequency
technology will extend the capability of our GaAs process family to the
higher voltage needed for both military and commercial applications at
frequencies above 20 GHz. As such it will provide a new capability
intermediate between today's GaAs and the emerging GaN technology."



((Comments on this story may be sent to newsdesk@closeupmedia.com))

((Distributed on behalf of 10Meters via M2 Communications Ltd -
http://www.m2.com))
((10Meters - http://www.10meters.com))

Copyright ? 2008 Wireless News

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