[July 28, 2015] |
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Intel and Micron Produce Breakthrough Memory Technology
Intel (News - Alert) Corporation and Micron Technology, Inc. today unveiled 3D XPoint™
technology, a non-volatile memory that has the potential to
revolutionize any device, application or service that benefits from fast
access to large sets of data. Now in production, 3D XPoint technology is
a major breakthrough in memory process technology and the first new
memory category since the introduction of NAND flash in 1989.
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Intel and Micron invented unique material compounds and a cross point architecture for a memory technology that is 10 times denser than conventional memory. (Photo: Business Wire)
The explosion of connected devices and digital services is generating
massive amounts of new data. To make this data useful, it must be stored
and analyzed very quickly, creating challenges for service providers and
system builders who must balance cost, power and performance trade-offs
when they design memory and storage solutions. 3D XPoint technology
combines the performance, density, power, non-volatility and cost
advantages of all available memory technologies on the market today. The
technology is up to 1,000 times faster and has up to 1,000 times greater
endurance3 than NAND, and is 10 times denser than
conventional memory.
"For decades, the industry has searched for ways to reduce the lag time
between the processor and data to allow much faster analysis," said Rob
Crooke, senior vice president and general manager of Intel's
Non-Volatile Memory Solutions Group. "This new class of non-volatile
memory achieves this goal and brings game-changing performance to memory
and storage solutions."
"One of the most significant hurdles in modern computing is the time it
takes the processor to reach data on long-term storage," said Mark
Adams, president of Micron. "This new class of non-volatile memory is a
revolutionary technology that allows for quick access to enormous data
sets and enables entirely new applications."
As the digital world quickly grows - from 4.4 zettabytes of digital data
created in 2013 to an expected 44 zettabytes by 20204 - 3D
XPoint technology can turn this immense amount of data into valuable
information in nanoseconds. For example, retailers may use 3D XPoint
technology to more quickly identify fraud detection patterns in
financial transactions; healthcare researchers could process and analyze
larger data sets in real time, accelerating complex tasks such as
genetic analysis and disease tracking.
The performance benefits of 3D XPoint technology could also enhance the
PC experience, allowing consumers to enjoy faster interactive social
media and collaboration as well as more immersive gaming experiences.
The non-volatile nature of the technology also makes it a great choice
for a variety of low-latency storage applications since data is not
erased when the device is powered off.
New Recipe, Architecture for Breakthrough Memory Technology
Following more than a decade of research and development, 3D XPoint
technology was built from the ground up to address the need for
non-volatile, high-performance, high-endurance and high-capacity storage
and memory at an affordable cost. It ushers in a new class of
non-volatile memory that significantly reduces latencies, allowing much
more data to be stored close to the processor and accessed at speeds
previously impossible for non-volatile storage.
The innovative, transistor-less cross point architecture creates a
three-dimensional checkerboard where memory cells sit at the
intersection of word lines and bit lines, allowing the cells to be
addressed individually. As a result, data can be written and read in
small sizes, leading to faster and more efficient read/write processes.
More details about 3D XPoint technology include:
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Cros Point Array Structure - Perpendicular conductors connect
128 billion densely packed memory cells. Each memory cell stores a
single bit of data. This compact structure results in high performance
and high-density bits.
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Stackable - In addition to the tight cross point array
structure, memory cells are stacked in multiple layers. The initial
technology stores 128Gb per die across two memory layers. Future
generations of this technology can increase the number of memory
layers, in addition to traditional lithographic pitch scaling, further
improving system capacities.
-
Selector - Memory cells are accessed and written or read by
varying the amount of voltage sent to each selector. This eliminates
the need for transistors, increasing capacity while reducing cost.
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Fast Switching Cell - With a small cell size, fast switching
selector, low-latency cross point array and fast write algorithm, the
cell is able to switch states faster than any existing non-volatile
memory technology today.
3D XPoint technology will sample later this year with select customers,
and Intel and Micron are developing individual products based on the
technology.
Multimedia Elements:
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things storage and memory:
Intel
Intel (NASDAQ: INTC) is a world leader in computing innovation. The
company designs and builds the essential technologies that serve as the
foundation for the world's computing devices. As a leader in corporate
responsibility and sustainability, Intel also manufactures the world's
first commercially available "conflict-free" microprocessors. Additional
information about Intel is available at newsroom.intel.com
and blogs.intel.com,
and about Intel's conflict-free efforts at conflictfree.intel.com.
Micron Technology (News - Alert), Inc.
Micron Technology, Inc., is a global leader in advanced semiconductor
systems. Micron's broad portfolio of high-performance memory
technologies-including DRAM, NAND and NOR Flash-is the basis for solid
state drives, modules, multichip packages and other system solutions.
Backed by more than 35 years of technology leadership, Micron's memory
solutions enable the world's most innovative computing, consumer,
enterprise storage, networking, mobile, embedded and automotive
applications. Micron's common stock is traded on the NASDAQ under the MU
symbol. To learn more about Micron Technology, Inc., visit www.micron.com
©2015 Micron Technology, Inc. All rights reserved. Micron and the Micron
orbit logo are trademarks of Micron Technology, Inc.
Intel and 3D XPoint are trademarks of Intel Corporation in the U.S.
and/or other countries.
*All other trademarks are the property of their respective owners.
This document contains forward looking statements. Forward looking
statements are predictions, projections and other statements about
future events that are based on current expectations and assumptions
and, as a result, are subject to risks and uncertainties. Many factors
could cause actual results to differ materially from the forward-looking
statements in this document. A detailed discussion of the factors that
could affect Intel's results and plans is included in Intel's SEC (News - Alert)
filings, including the annual report on Form 10-K.
1 Performance difference based on comparison between 3D
XPoint technology and other industry NAND 2 Density
difference based on comparison between 3D XPoint technology and other
industry DRAM 3 Endurance difference based on comparison
between 3D XPoint technology and other industry NAND 4 http://www.emc.com/leadership/digital-universe/2014iview/executive-summary.htm
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