[May 28, 2015] |
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Efficient Power Conversion (EPC) Widens the Performance Gap with 7 m? 200 V, and 5 m? 150 V Gallium Nitride Power Transistors
Efficient
Power Conversion Corporation (EPC) announces the introduction of two
eGaN FETs that raise the bar for power conversion performance. These
products have a maximum operating temperature of 150°C and pulsed
currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034).
Applications include DC-DC converters, synchronous rectification in
DC/DC and AC/DC converters, motor drives, LED lighting, and industrial
automation.
These products further expand EPC's family of "Relaxed
Pitch" devices featuring a 1 mm ball pitch. The wider pitch allows
for placement of additional and larger vias under the device to enable
high current carrying capability despite the extremely small 2.6 mm x
4.6 mm footprint.
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Part Number
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VDS
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RDS(on) (typical)
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QG (typical)
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ID (Pulsed)
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Size
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Price (1K Units)
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EPC2033
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150 V
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5.0 mOhm
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10 nC
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260 A
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2.6 mm x 4.6 mm
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$4.25
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EPC2034
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200 V
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7.0 mOhm
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8.5 nC
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140 A
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2.6 mm x 4.6 mm
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$4.37
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Development Board
To simplify the evaluation process of these high performance eGaN FETs,
the EPC9047
development board is available to support easy "in circuit" performance
evaluation of the EPC2033.
This board includes all the critical components that can be easily
connected into any existing converter.
The EPC9047
is in a half-bridge topology measuring 2" x 1.5". It contains two EPC2033
eGaN FETs using the Texas Instruments (News - Alert) UCC27611 gate driver, as well as
supply and bypass capacitors. The board contains all critical components
and layout for optimal switching performance and has various probe
points to facilitate simple waveform measurement and efficiency
calculation.
Availability
The EPC2033
and EPC2034
are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en.
The EPC9047
development board is $137.75 and is available for immediate delivery
from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en.
Design Information and Support for eGaN FETs
About EPC
EPC is the leader in enhancement mode gallium nitride based power
management devices and was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
converters, wireless
power transfer, envelope
tracking, RF transmission, power
inverters, remote
sensing technology (LiDAR), and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs.
www.epc-co.com
eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc.
View source version on businesswire.com: http://www.businesswire.com/news/home/20150528005409/en/
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