Telecom Platform Deployment Featured Article
Ensphere Solutions Rolls Out Two New 10G Laser Diode Driver Arrays
By Jayashree Adkoli, TMCnet Contributor
(NEBS) Silicon Valley, Calif.-based Ensphere Solutions, a provider of advanced communications semiconductor integrated circuits, recently rolled out two new 12-port and 4-port 10G Laser Diode Driver Arrays "LDDs" targeted at 10G, 40G, and 100G long haul optical modules.
According to a press release, Ensphere's latest offerings, ESI (News - Alert)-1014 and ESI-1110, driver arrays support a wide variety of laser RC time constants, thereby facilitating them to drive FP/DFB lasers.
Apart from delivering a highly integrated solution for 10G, 40G, and 100G optical modules where they deliver high performance and low solution costs in four-port (ESI-1014), and 12-port (ESI-1110) applications, these new 10G drivers are also capable of supplying up to 100 mA of bias and 50 mA of modulation currents per port.
Available as raw dies, in either flip-chip or die-bonding configurations, both the new laser driver ICs can be used in a shunt configuration. When used in this configuration, both the LDDs can considerably reduce overall power dissipation as well as PCB area of a design by assuming the heavy burden of driving low impedance laser diodes while presenting a 100Ω load to the preceding driver.
Completely characterized over industrial temperature range, Ensphere's latest LDDs are deployed in a low power CMOS technology. These LDDS consume 100 mW/port, including the power dissipated by the laser. Additionally, crosstalk between adjacent ports is less than -30 dB.
In the release, Hessam Mohajeri, CEO at Ensphere said that the company's latest offerings have been defined and developed in close cooperation with leading optical module vendors. The single most key differentiator for these products is the delivery of system performance while all channels are running at full speed.
Al Gharakhanian, VP of marketing at Ensphere, said, "The die for these arrays can be mounted directly adjacent to the laser array within the optical subassembly or module. This scheme minimizes the footprint and trace lengths improving the performance and compactness of the module."
Company officials said that production quantities of both devices will be available at the end of August 2010.
In March, Ensphere Solutions unveiled a new enhanced temperature sensor core, ESI-P3010, which is a power and area optimized intellectual property implemented in mainstream processes such as TSMC 65nm-G and TowerJazz 180 nm. This core incorporates of a temperature sensor connected to one of the eight inputs of an analog multiplexer.
Ensphere specializes in the development of standard and custom mixed signal transceivers and RF chips. Its standard products are targeted for high-speed optical data communications.
Jayashree Adkoli is a contributing editor for TMCnet. To read more of Jayashree's articles, please visit her columnist page.
Edited by Marisa Torrieri