Power Protection FEATURED ARTICLE

Toshiba (News - Alert) Corporation launched the new “DTMOS IV-H series” of high-speed switching type super junction MOSFETs. The MOSFETs are based on the fourth generation 600V super junction MOSFET “DTMOS IV series” from the company. (A MOSFET is a metal–oxide–semiconductor field-effect transistor, used for amplifying or switching electronic signals.)

A manufacturer, solutions provider and marketer of electronic and electrical products and systems, Toshiba offers products ranging from LCD TVs to notebook PCs.

The products in the new DTMOS series will feature low ON (News - Alert)-resistance levels at high temperatures owing to the use of the single epitaxial process. The new products can also achieve faster switching performance by minimizing the parasitic capacitance that occurs between gate and drain. These features will help enhance the power efficiency in products.

The new DTMOS IV-H series high-speed switching type super junction MOSFETs feature gate pattern optimization which produces a 45 percent reduction in gate-drain charge when compared to the “DTMOS IV series.”

These features and the low ON-resistance lineup make the MOSFET switching series suitable for applications in high-efficiency switching power supplies that are used in servers and telecom base stations. The devices are also suitable for power conditioners in photovoltaic inverters.

It is expected that the mass production of the three new products in the series will commence shortly. More upgrades will be made in future packages, said officials.

Toshiba also announced the launch of “TC7763WBG” wireless power receiver IC for mobile equipment that is compatible with the Qi1 standard defined by the wireless power consortium (WPC) which includes smartphones and mobile accessories.